Search results for "Surface photovoltage"
showing 5 items of 5 documents
An Investigation of the Energy Levels within a Common Perovskite Solar Cell Device and a Comparison of DC/AC Surface Photovoltage Spectroscopy Kelvin…
2017
We present a study of the energy levels in a FTO/TiO2/CH3NH3PbI3/Spiro solar cell device. The measurements are performed using a novel ambient pressure photoemission (APS) technique alongside Contact Potential Difference data from a Kelvin Probe. The Perovskite Solar Cell energy band diagram is demonstrated for the device in dark conditions and under illumination from a 150W Quartz Tungsten Halogen lamp. This approach provides useful information on the interaction between the different materials in this solar cell device. Additionally, non-destructive macroscopic DC and AC Surface Photovoltage Spectroscopy (SPS) studies are demonstrated of different MAPBI3 device structures to give an indic…
Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy
2015
In this work, we demonstrate the capabilities of atomic force microscopies (AFMs) for the nondestructive determination of the polarity of GaN nanowires (NWs). Three complementary AFMs are analyzed here: Kelvin probe force microscopy (KPFM), light-assisted KPFM, and piezo-force microscopy (PFM). These techniques allow us to assess the polarity of individual NWs over an area of tens of μm(2) and provide statistics on the polarity of the ensemble with an accuracy hardly reachable by other methods. The precise quantitative analysis of the tip-sample interaction by multidimensional spectroscopic measurements, combined with advanced data analysis, has allowed the separate characterization of elec…
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
2020
Abstract We have analysed electrical properties of extended defects and interfaces in fully strained and partially relaxed InxGa1-xN/GaN heterostructures by means of Kelvin probe force microscopy and surface photovoltage spectroscopy. The study highlights the role of indium incorporation and Si doping levels on the charge state of extended defects including threading dislocations, V defects and misfit dislocations. Surface potential maps reveal that these defects are associated with a different local work function and thus could remarkably alter electron-hole recombination mechanisms of InxGa1-xN/GaN layers locally. Surface photovoltage spectra clearly demonstrate the role of misfit disloca…
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
2002
The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
2003
Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.